A1015 PNP Epitaxial Silicon Transistor
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Description
Type Designator: A1015
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 130
Noise Figure, dB: -
Package: SOT23
A1015 PNP Epitaxial Silicon Transistor